TOKYO, Jan 26 (Bernama-BUSINESS WIRE) -- Toshiba Electronic Devices & Storage Corporation today announced the development of "TaRF10," a next generation TarfSOI™ (Toshiba advanced RF SOI[1]) process optimized for low-noise amplifiers (LNAs) in smartphone applications.
In recent years, the increasing speed of mobile data communication has expanded use of RF switches and filters in the analog front end of mobile devices. The resulting increase in signal loss between antenna and receiver circuit has degraded receiver sensitivity, and focused attention on LNAs with a low noise figure[2] (NF) as a means to compensate for signal loss and improve the integrity of the received signal.
In recent years, the increasing speed of mobile data communication has expanded use of RF switches and filters in the analog front end of mobile devices. The resulting increase in signal loss between antenna and receiver circuit has degraded receiver sensitivity, and focused attention on LNAs with a low noise figure[2] (NF) as a means to compensate for signal loss and improve the integrity of the received signal.
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